Mitsubishi launched three high current 1.2kV three phase IGBT modules at PCIM in Nuremberg, in transfer-moulded packages. Branded ‘Large DIPIPM+’, the modules include high and low-side drive ICs. “Of ...
For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...
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