With every new generation of handheld electronics such as cell phones, digital cameras, and PDAs, manufacturers are striving to deliver additional features while reducing the size of the portable ...
The IXTY2P50PA developed by Littelfuse is a compact, PolarP P-channel power MOSFET with low package inductance that’s AEC-Q101 qualified. MOSFETs are essential parts for automobile electrification, as ...
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Point-of-Load Synchronous Buck in Networking, Telecom and ...
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and ...
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched "TPH2R70AR5," a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba's latest-generation process([1]) . The MOSFET ...
A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
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