There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...

3.3 kV SiC MOSFETs and Schottky Barrier Diodes (SBDs) extend designers’ options for high-voltage power electronics in transportation, energy and industrial systems CHANDLER, Ariz., March 21, 2022 ...

Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...

CHANDLER, Ariz., March 16, 2020 (GLOBE NEWSWIRE) -- Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to ...

Dig into the details of just how reliable are some GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies are for S-Band and X-Band. August 14th, 2019 - By: Wolfspeed, a ...

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...

STAr Technologies, a leader in parametric and reliability test systems today has launched STAr Pluto series tester to meet test needs for both Package- and Wafer-level reliability test systems. This ...

SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification ...

While the electric-vehicle market continues to grow, challenges remain to achieve widespread adoption. One trend to address those issues is the development of 800-V EV bus drive systems based on ...