TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...
TL;DR: Samsung Electronics has successfully developed its 10nm-class 6th-generation D1c DRAM process, enabling advanced HBM4 memory production. This breakthrough enhances chip stability, reduces ...
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